2H-WS₂ (2H Tungsten Disulfide)是一種半導(dǎo)體層狀材料。層間相互作用為范德華（van der Waals）相互作用。它是間接帶隙半導(dǎo)體，帶隙大小約為1.3 eV。但是單層的WS₂是直接帶隙半導(dǎo)體。二硫化鎢屬于第六族過渡金屬二鹵化物（TMDC）。我們提供的2H-WS₂直徑8 -10 mm，是n型半導(dǎo)體，室溫下載流子濃度約為10¹⁴ cm^-3量級(jí)。

2H-WS2 crystal properties

Crystal size	~10 mm
Electrical properties	Semiconductor, n-type, undoped
Crystal structure	hexagonal
Unit cell parameters	a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°
Monolayer properties	Link to C2DB containing calculated properties
Type	Synthetic
Purity	>99.995 %
Characterized by	XRD, Raman, EDX, Hall measurement